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XP05553|XP5553 PDF预览

XP05553|XP5553

更新时间: 2024-11-29 23:33:51
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其他 - ETC 晶体晶体管
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3页 80K
描述
Composite Device - Composite Transistors

XP05553|XP5553 数据手册

 浏览型号XP05553|XP5553的Datasheet PDF文件第2页浏览型号XP05553|XP5553的Datasheet PDF文件第3页 
Composite Transistors  
XP05553  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
0.12  
–0.02  
0.2 0.05  
For low-frequency amplification  
5
6
4
3
Features  
Two elements incorporated into one package (Each transistor is  
separated)  
1
2
Reduction of the mounting area and assembly cost by one half  
High forward current transfer ratio hFE  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
10˚  
Basic Part Number  
2SD1149 × 2  
Absolute Maximum Ratings Ta = 25°C  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Emitter (Tr2)  
6: Collector (Tr1)  
SMini6-G1 Package  
Parameter  
Symbol  
Rating  
100  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
100  
V
Marking Symbol: 4U  
Internal Connection  
15  
V
Collector current  
IC  
PT  
Tj  
20  
mA  
mW  
°C  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
6
5
4
150  
Tstg  
55 to +150  
Tr1  
Tr2  
3
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
100  
100  
15  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
IC = 10 µA, IE = 0  
IC = 1 mA, IB = 0  
V
IE = 10 µA, IC = 0  
VCB = 60 V, IE = 0  
VCE = 60 V, IB = 0  
VCE = 10 V, IC = 2 mA  
V
0.1  
1
µA  
µA  
V
ICEO  
hFE  
400  
2000  
0.20  
Collector-emitter saturation voltage  
Noise voltage  
VCE(sat) IC = 10 mA, IB = 1 mA  
0.05  
80  
NV  
VCE = 10 V, IC = 1 mA, GV = 80 dB  
mV  
Rg = 100 k, Function = Flat  
Transition frequency  
fT  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
150  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: June 2003  
SJJ00194BED  
1

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